absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 18* i d @ v gs = 10v, t c = 100c continuous drain current 18* i dm pulsed drain current ? 72 p d @ t c = 25c max. power dissipation 100 w linear derating factor 0.8 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 308 mj i ar avalanche current ? 18 a e ar repetitive avalanche energy ? 10 mj dv/dt p eak diode recovery dv/dt ? 1.8 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 4.3 (typical) g o c a 05/31/02 www.irf.com 1 product summary part number bv dss r ds(on) i d IRF7Y1405CM 55v 0.0153 ? 18a* for footnotes refer to the last page hexfet ? power mosfet IRF7Y1405CM thru-hole (to-257aa) 55v, n-channel seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed light weight to-257aa * current is limited by package pd - 94449
IRF7Y1405CM 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 55 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.057 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.0153 ? v gs = 10v, i d = 18a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250 a g fs forward transconductance 36 ? ? s ( )v ds =15v, i ds = 18a ? i dss zero gate voltage drain current ? ? 25 v ds = 55v ,v gs =0v ? ? 250 v ds = 44v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 200 v gs =10v, i d = 18a q gs gate-to-source charge ? ? 40 nc v ds = 44v q gd gate-to-drain (?miller?) charge ? ? 80 t d (on) turn-on delay time ? ? 20 v dd = 28v, i d = 18a, t r rise time ? ? 90 v gs = 10v, r g = 2.5 ? t d (off) turn-off delay time ? ? 250 t f fall time ? ? 150 l s + l d total inductance ? 6.8 ? measured from drain lead (6mm/ 0.25in. from package ) to source lead (6mm/0.25in. from pacakge lc iss input capacitance ? 5080 ? v gs = 0v, v ds = 25v c oss output capacitance ? 1300 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 300 ? na ? ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.25 c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 18* i sm pulse source current (body diode) ? ?? 72 v sd diode forward voltage ? ? 1.3 v t j = 25c, i s = 18a, v gs = 0v ? t rr reverse recovery time ? ? 100 ns t j = 25c, i f = 18a, di/dt 100a/ s q rr reverse recovery charge ? ? 350 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by package
www.irf.com 3 IRF7Y1405CM fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 18a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 3.7v 2 0s pulse width tj = 150c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current ( ) t j = 25c t j = 150c v ds = 25v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) 3.7v 20s pulse width tj = 25c vgs top 15v 10v 7.0v 5.0v 4.5v 4.3v 4.0v bottom 3.7v
IRF7Y1405CM 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 60 120 180 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 18a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by rds(on) 100s 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage ( v ) 0.1 1 10 100 i sd , reverse drain current ( ) v gs = 0v t j = 150c t j = 25c
www.irf.com 5 IRF7Y1405CM fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd v gs v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d limited by package
IRF7Y1405CM 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge 10v r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . v gs t p v (br)dss i as d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.0a 11.4a 18a
www.irf.com 7 IRF7Y1405CM ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/02 repetitive rating; pulse width limited by maximum junction temperature. i sd 18a, di/dt 230 a/ s, v dd 55v, t j 150c pulse width 300 s; duty cycle 2% v dd = 25 v, starting t j = 25c, l= 1.9 mh peak i as = 18a, v gs =10v, r g = 25 ? footnotes: 3.05 [.120] 0.13 [.005] 0.71 [.028] max. b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 3 2 1 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140] not e s : 1. dime ns ioning & t ole rancing pe r ans i y14.5m-199 4. 2. cont rolling dime ns ion: inch. 3. di me ns i ons ar e s h own i n mi l l ime t e r s [i nch e s ]. 4. out line conf orms t o jedec out line t o-257aa. 2 = drain 3 = s ource 1 = gat e case outline and dimensions ? to-257aa pin as s ignments
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